PART |
Description |
Maker |
QVS212CG0R6BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
QVS212CG030BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
QVS212CG0R5CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
CPH6003A-TL-E CPH6003A-D |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
CPH6003A12 |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
NE678M04-T2-A NE678M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
NE678M04-T2 NE678M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 中功率NPN硅高频晶体管
|
NEC, Corp. NEC Corp. NEC[NEC]
|